Search
Filters

IRF5210STRLPBF

MOSFET P-CH 100V 38A D2PAK
Manufacturer: Infineon Technologies
rohs
Rated 5/5 based on 1 customer reviews
Quantity
Price
Ext. Price
50+
€0.963
€48.150
120+
€0.761
€91.260
395+
€0.685
€270.536
Availability: 16,933 In Stock
This product has a minimum quantity of 50
IRF5210STRLPBF, produced by Infineon Technologies, is a P-Channel MOSFET transistor in D2PAK SMD (SMT) package. The features include 100V drain-source breakdown voltage, 38A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRF5210STRLPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 2780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 017433-IRF5210STRLPBF
Family Name IRF5210S
Introduction Date May 22, 2006
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
RSJ250P10FRATL; FQB34P10;  FQB34P10TM_NL; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 2780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 017433-IRF5210STRLPBF
Family Name IRF5210S
Introduction Date May 22, 2006
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
RSJ250P10FRATL; FQB34P10;  FQB34P10TM_NL; 
IRF5210STRLPBF Price

IRF5210STRLPBF Datasheet
IRF5210STRLPBF Application

IRF5210STRLPBF Replacement
IRF5210STRLPBF Pdf

IRF5210STRLPBF Pinout
IRF5210STRLPBF Image

IRF5210STRLPBF Picture
IRF5210STRLPBF In Stock

IRF5210STRLPBF Distributor
IRF5210STRLPBF Transistors - FETs, MOSFETs - RF

Image
Mfr.Part No
Description
Stock
FILTER RC(PI) 100 OHM/15PF SMD
72146
OPTOISO 3.75KV PUSH PULL 8SO
1
IC FLASH 2MBIT 70NS 32VSOP
149
IC REG LDO 1.5V 0.15A SNT6A
36400
Quad/Octal, 2-Wire Serial 8-Bit DACs with Rail-to-Rail Outputs
2