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IRF540NPBF

Part No : IRF540NPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 100V 33A TO-220AB
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
205+
€0.222
€45.572
480+
€0.188
€90.288
740+
€0.183
€135.198
1,020+
€0.177
€180.846
1,320+
€0.171
€225.720
1,755+
€0.154
€270.095
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 265,400 pieces can ship immediately
MOQ: 205 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 093662-IRF540NPBF
Family Name IRF540N
Introduction Date November 03, 2003
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 28 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
IRF540N_NL; IRF540N_R4942; SMP40N10; 
IRF540NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 100V drain-source breakdown voltage, 33A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRF540NPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 093662-IRF540NPBF
Family Name IRF540N
Introduction Date November 03, 2003
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 28 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
IRF540N_NL; IRF540N_R4942; SMP40N10; 
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IRF540NPBF Transistors - FETs, MOSFETs - RF

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