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IRF7749L1TRPBF

Part No : IRF7749L1TRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 60V 33A DIRECTFETL8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
17+
€2.858
€48.589
40+
€2.418
€96.724
65+
€2.345
€152.419
85+
€2.272
€193.096
110+
€2.199
€241.838
150+
€1.979
€296.845
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,000 pieces can ship immediately
MOQ: 17 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 33A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 12320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 120A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET L8
Dimension DirectFET Isometric L8
Win Source Part Number 001921-IRF7749L1TRPBF
Popularity Medium
Fake Threat In the Open Market 41 pct.
Supply and Demand Status Limited
IRF7749L1TRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in DIRECTFET L8 SMD (SMT) package. The features include 60V drain-source breakdown voltage, 33A (Ta), 200A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRF7749L1TRPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 33A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 12320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 120A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET L8
Dimension DirectFET Isometric L8
Win Source Part Number 001921-IRF7749L1TRPBF
Popularity Medium
Fake Threat In the Open Market 41 pct.
Supply and Demand Status Limited
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