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IRF7805TRPBF

Part No : IRF7805TRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 30V 13A 8-SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
90+
€0.545
€49.055
210+
€0.461
€96.868
325+
€0.447
€145.220
445+
€0.433
€192.841
575+
€0.419
€240.870
770+
€0.378
€290.672
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 11,990 pieces can ship immediately
MOQ: 90 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001931-IRF7805TRPBF
Popularity Medium
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
IRF7805TRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 13A (Ta) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. IRF7805TRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001931-IRF7805TRPBF
Popularity Medium
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
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IRF7805TRPBF Price

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IRF7805TRPBF Transistors - FETs, MOSFETs - RF

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