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IRF7855TRPBF

MOSFET N-CH 60V 12A 8-SOIC
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews
Quantity
Price
Ext. Price
80+
€0.591
€47.304
195+
€0.467
€91.085
645+
€0.420
€271.094
Availability: 18,000 In Stock
This product has a minimum quantity of 80
IRF7855TRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 60V drain-source breakdown voltage, 12A (Ta) continuous drain current at 25°C ,4.9V @ 100μA gate-source threshold voltage. IRF7855TRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1560pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 001964-IRF7855TRPBF
Family Name IRF7855
Introduction Date May 17, 2006
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
TSM120N06LCS RLG;  TSM120NA06LCS RLG; TPC8049-H;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1560pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 001964-IRF7855TRPBF
Family Name IRF7855
Introduction Date May 17, 2006
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
TSM120N06LCS RLG;  TSM120NA06LCS RLG; TPC8049-H;  
IRF7855TRPBF Price

IRF7855TRPBF Datasheet
IRF7855TRPBF Application

IRF7855TRPBF Replacement
IRF7855TRPBF Pdf

IRF7855TRPBF Pinout
IRF7855TRPBF Image

IRF7855TRPBF Picture
IRF7855TRPBF In Stock

IRF7855TRPBF Distributor
IRF7855TRPBF Transistors - FETs, MOSFETs - RF

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