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IRFB260NPBF

Part No : IRFB260NPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 200V 56A TO-220AB
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
40+
€1.362
€54.467
85+
€1.152
€97.899
130+
€1.117
€145.220
180+
€1.082
€194.834
230+
€1.047
€240.760
310+
€0.943
€292.261
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 80,079 pieces can ship immediately
MOQ: 40 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 4220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090152-IRFB260NPBF
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Balance
IRFB260NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 200V drain-source breakdown voltage, 56A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFB260NPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 4220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090152-IRFB260NPBF
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Balance
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IRFB260NPBF Transistors - FETs, MOSFETs - RF

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