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IRFB3607PBF

MOSFET N-CH 75V 80A TO-220AB
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews
IRFB3607PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 75V drain-source breakdown voltage, 80A (Tc) continuous drain current at 25°C ,4V @ 100μA gate-source threshold voltage. IRFB3607PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
165+
€0.265
€43.705
440+
€0.216
€94.978
1,370+
€0.188
€258.026
Availability: 180,682 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 165 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 092209-IRFB3607PBF
Family Name IRFB3607
Introduction Date February 22, 2008
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
STP80N70F4;  BUK7509-75A;  BUK9516-75B,127;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 092209-IRFB3607PBF
Family Name IRFB3607
Introduction Date February 22, 2008
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
STP80N70F4;  BUK7509-75A;  BUK9516-75B,127;  
IRFB3607PBF Price

IRFB3607PBF Datasheet
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IRFB3607PBF Transistors - FETs, MOSFETs - RF

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