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IRFB3607PBF

Part No : IRFB3607PBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 75V 80A TO-220AB
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
160+
€0.286
€45.792
375+
€0.242
€90.788
575+
€0.235
€135.068
795+
€0.228
€181.022
1,025+
€0.221
€226.013
1,365+
€0.198
€270.270
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 129,807 pieces can ship immediately
MOQ: 160 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 092209-IRFB3607PBF
Family Name IRFB3607
Introduction Date February 22, 2008
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 39 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
STP80N70F4;  BUK7509-75A;  BUK9516-75B,127;  
IRFB3607PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 75V drain-source breakdown voltage, 80A (Tc) continuous drain current at 25°C ,4V @ 100μA gate-source threshold voltage. IRFB3607PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 092209-IRFB3607PBF
Family Name IRFB3607
Introduction Date February 22, 2008
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 39 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
STP80N70F4;  BUK7509-75A;  BUK9516-75B,127;  
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