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IRFL024NTRPBF

Part No :
IRFL024NTRPBF
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 55V 2.8A SOT223
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
165+
€0.277
€45.670
380+
€0.235
€89.285
590+
€0.228
€134.426
810+
€0.221
€178.783
1,045+
€0.214
€223.212
1,390+
€0.192
€267.214
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 34,552 pieces can ship immediately
MOQ: 165 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18.3nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017615-IRFL024NTRPBF
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Sufficient
IRFL024NTRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in SOT-223 SMD (SMT) package. The features include 55V drain-source breakdown voltage, 2.8A (Ta) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFL024NTRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18.3nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017615-IRFL024NTRPBF
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Sufficient
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