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IRFL4310TRPBF

Part No : IRFL4310TRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 100V 1.6A SOT223
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
180+
€0.270
€48.535
425+
€0.228
€96.998
655+
€0.222
€145.076
900+
€0.215
€193.274
1,160+
€0.208
€241.289
1,550+
€0.187
€289.574
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 199,269 pieces can ship immediately
MOQ: 180 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017620-IRFL4310TRPBF
Popularity Medium
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Sufficient
IRFL4310TRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in SOT-223 SMD (SMT) package. The features include 100V drain-source breakdown voltage, 1.6A (Ta) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFL4310TRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017620-IRFL4310TRPBF
Popularity Medium
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Sufficient
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IRFL4310TRPBF Transistors - FETs, MOSFETs - RF

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