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IRFP064NPBF

MOSFET N-CH 55V 110A TO-247AC
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews
IRFP064NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-247AC Through Hole package. The features include 55V drain-source breakdown voltage, 110A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFP064NPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
55+
$0.950
$52.250
145+
$0.775
$112.375
445+
$0.675
$300.375
Availability: 104,000 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 55 pcs
Products specifications
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
NTE2913;  HUFA75344G3T; HUFA75344G3; 
ECCN EAR99
Introduction Date February 11, 2004
Family Name IRFP064
Win Source Part Number 017623-IRFP064NPBF
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-247-3
Case / Package TO-247AC
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 8 mOhm @ 59A, 10V
Power Dissipation (Max) 200W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 4000pF @ 25V
Max Gate Charge 170nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 110A (Tc)
Drain-Source Breakdown Voltage 55V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Bulk
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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  • The Pre-Shipment Inspection (PSI) will be applied;
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  • For more details, please kindly review our FAQ page.
Products specifications
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
NTE2913;  HUFA75344G3T; HUFA75344G3; 
ECCN EAR99
Introduction Date February 11, 2004
Family Name IRFP064
Win Source Part Number 017623-IRFP064NPBF
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-247-3
Case / Package TO-247AC
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 8 mOhm @ 59A, 10V
Power Dissipation (Max) 200W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 4000pF @ 25V
Max Gate Charge 170nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 110A (Tc)
Drain-Source Breakdown Voltage 55V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Bulk
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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IRFP064NPBF Transistors - FETs, MOSFETs - RF

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