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IRFP064NPBF

Part No : IRFP064NPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 55V 110A TO-247AC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
55+
€0.880
€48.411
125+
€0.745
€93.150
190+
€0.723
€137.313
260+
€0.700
€182.052
335+
€0.678
€227.030
445+
€0.609
€271.139
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 101,799 pieces can ship immediately
MOQ: 55 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 59A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017623-IRFP064NPBF
Family Name IRFP064
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 39 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
NTE2913;  HUFA75344G3T; HUFA75344G3; 

IRFP064NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-247AC Through Hole package. The features include 55V drain-source breakdown voltage, 110A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFP064NPBF is used in the -55°C to 175°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 59A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017623-IRFP064NPBF
Family Name IRFP064
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 39 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
NTE2913;  HUFA75344G3T; HUFA75344G3; 
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IRFP064NPBF Transistors - FETs, MOSFETs - RF

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