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IRFP150NPBF

Part No : IRFP150NPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 100V 42A TO-247AC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
75+
€0.626
€46.980
170+
€0.530
€90.117
265+
€0.514
€136.184
365+
€0.499
€181.989
470+
€0.482
€226.728
625+
€0.434
€271.125
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 74,881 pieces can ship immediately
MOQ: 75 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017625-IRFP150NPBF
Family Name IRFP150N
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
MTW45N10E;  2SK1436; RFG40N10LE9A; 

IRFP150NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-247AC Through Hole package. The features include 100V drain-source breakdown voltage, 42A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFP150NPBF is used in the -55°C to 175°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017625-IRFP150NPBF
Family Name IRFP150N
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
MTW45N10E;  2SK1436; RFG40N10LE9A; 
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IRFP150NPBF Transistors - FETs, MOSFETs - RF