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IRFP4668PBF

MOSFET N-CH 200V 130A TO-247AC
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
15+
€3.159
€47.385
40+
€2.494
€99.756
125+
€2.245
€280.575
Availability: 20,649 In Stock
This product has a minimum quantity of 15
IRFP4668PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-247AC Through Hole package. The features include 200V drain-source breakdown voltage, 130A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. IRFP4668PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 241nC @ 10V
Max Input Capacitance 10720pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 81A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 087850-IRFP4668PBF
Family Name IRFP4668
Introduction Date September 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
STY130NF20D; IXFB210N20P; IXFX230N20T; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 241nC @ 10V
Max Input Capacitance 10720pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 81A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 087850-IRFP4668PBF
Family Name IRFP4668
Introduction Date September 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
STY130NF20D; IXFB210N20P; IXFX230N20T; 
IRFP4668PBF Price

IRFP4668PBF Datasheet
IRFP4668PBF Application

IRFP4668PBF Replacement
IRFP4668PBF Pdf

IRFP4668PBF Pinout
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IRFP4668PBF Picture
IRFP4668PBF In Stock

IRFP4668PBF Distributor
IRFP4668PBF Transistors - FETs, MOSFETs - RF

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