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IRFP4668PBF

Part No : IRFP4668PBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 200V 130A TO-247AC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
16+
€2.930
€46.872
40+
€2.479
€99.144
60+
€2.404
€144.234
80+
€2.329
€186.336
100+
€2.254
€225.360
135+
€2.029
€273.861
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 19,107 pieces can ship immediately
MOQ: 16 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 241nC @ 10V
Max Input Capacitance 10720pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 81A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 087850-IRFP4668PBF
Family Name IRFP4668
Introduction Date September 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 46 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
STY130NF20D; IXFB210N20P; IXFX230N20T; 
IRFP4668PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-247AC Through Hole package. The features include 200V drain-source breakdown voltage, 130A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. IRFP4668PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 241nC @ 10V
Max Input Capacitance 10720pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 81A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 087850-IRFP4668PBF
Family Name IRFP4668
Introduction Date September 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 46 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
STY130NF20D; IXFB210N20P; IXFX230N20T; 
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