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IRFS4115PBF

Part No : IRFS4115PBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 150V 195A D2-PAK
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
30+
€1.633
€48.997
70+
€1.382
€96.733
110+
€1.341
€147.455
150+
€1.298
€194.719
195+
€1.257
€245.059
260+
€1.131
€293.946
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 500 pieces can ship immediately
MOQ: 30 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 5270pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 12.1 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205396-IRFS4115PBF
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Limited
IRFS4115PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in D2PAK SMD (SMT) package. The features include 150V drain-source breakdown voltage, 195A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. IRFS4115PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 5270pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 12.1 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205396-IRFS4115PBF
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Limited
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