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IRFU2307ZPBF

Part No : IRFU2307ZPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 75V 42A I-PAK
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
85+
$0.618
$52.530
195+
$0.523
$101.985
300+
$0.507
$152.100
410+
$0.491
$201.310
530+
$0.475
$251.750
705+
$0.428
$301.740
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 7,400 pieces can ship immediately
MOQ: 85 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Supply and Demand Status Balance
Fake Threat In the Open Market 38 pct.
Popularity Medium
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Case / Package IPAK (TO-251)
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Power Dissipation (Max) 110W (Tc)
Maximum Gate-Source Voltage ±20V
Max Gate Charge 75nC @ 10V
Gate-Source Threshold Voltage 4V @ 100μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 42A (Tc)
Drain-Source Breakdown Voltage 75V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
Max Input Capacitance 2190pF @ 25V
Maximum Rds On at Id,Vgs 16 mOhm @ 32A, 10V
Win Source Part Number 205406-IRFU2307ZPBF

IRFU2307ZPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in IPAK (TO-251) Through Hole package. The features include 75V drain-source breakdown voltage, 42A (Tc) continuous drain current at 25°C ,4V @ 100μA gate-source threshold voltage. IRFU2307ZPBF is used in the -55°C to 175°C (TJ) operating temperature range.

Products specifications
ECAD Module
Supply and Demand Status Balance
Fake Threat In the Open Market 38 pct.
Popularity Medium
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Case / Package IPAK (TO-251)
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Power Dissipation (Max) 110W (Tc)
Maximum Gate-Source Voltage ±20V
Max Gate Charge 75nC @ 10V
Gate-Source Threshold Voltage 4V @ 100μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 42A (Tc)
Drain-Source Breakdown Voltage 75V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
Max Input Capacitance 2190pF @ 25V
Maximum Rds On at Id,Vgs 16 mOhm @ 32A, 10V
Win Source Part Number 205406-IRFU2307ZPBF
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IRFU2307ZPBF Transistors - FETs, MOSFETs - RF

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