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IRFZ48NPBF

MOSFET N-CH 55V 64A TO-220AB
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
110+
€0.405
€44.557
270+
€0.320
€86.378
900+
€0.288
€259.290
Availability: 55,046 In Stock
This product has a minimum quantity of 110
IRFZ48NPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 55V drain-source breakdown voltage, 64A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFZ48NPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 1970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 092963-IRFZ48NPBF
Family Name IRFZ48N
Introduction Date February 10, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
BUK9511-55A,127;  BUK9510-55A,127;  BUK9509-55A;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 1970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 092963-IRFZ48NPBF
Family Name IRFZ48N
Introduction Date February 10, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
BUK9511-55A,127;  BUK9510-55A,127;  BUK9509-55A;  
IRFZ48NPBF Price

IRFZ48NPBF Datasheet
IRFZ48NPBF Application

IRFZ48NPBF Replacement
IRFZ48NPBF Pdf

IRFZ48NPBF Pinout
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IRFZ48NPBF In Stock

IRFZ48NPBF Distributor
IRFZ48NPBF Transistors - FETs, MOSFETs - RF

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