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IRLR7807ZPBF

Part No : IRLR7807ZPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 30V 43A DPAK
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
225+
€0.219
€49.185
525+
€0.185
€97.070
810+
€0.179
€145.086
1,115+
€0.173
€193.274
1,440+
€0.168
€241.289
1,915+
€0.151
€289.531
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 82,310 pieces can ship immediately
MOQ: 225 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 102913-IRLR7807ZPBF
Popularity Medium
Fake Threat In the Open Market 57 pct.
Supply and Demand Status Sufficient
IRLR7807ZPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in D-Pak SMD (SMT) package. The features include 30V drain-source breakdown voltage, 43A (Tc) continuous drain current at 25°C ,2.25V @ 250μA gate-source threshold voltage. IRLR7807ZPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 102913-IRLR7807ZPBF
Popularity Medium
Fake Threat In the Open Market 57 pct.
Supply and Demand Status Sufficient
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