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SI2318CDS-T1-GE3

Part No :
SI2318CDS-T1-GE3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 40V 5.6A SOT-23
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
275+
€0.176
€48.463
650+
€0.149
€97.022
1,000+
€0.144
€144.450
1,370+
€0.141
€192.619
1,775+
€0.136
€241.015
2,365+
€0.122
€289.242
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 62,285 pieces can ship immediately
MOQ: 275 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 340pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 4.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028384-SI2318CDS-T1-GE3
Family Name Si3210
Introduction Date July 28, 1998
ECCN EAR99
Country of Origin Taiwan
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 65 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Motor Drive & Control
Alternative Parts
(Cross-Reference)
KMB3D9N40TA;  TSM2318CX RF; TSM2318CX; 
SI2318CDS-T1-GE3, produced by Vishay, is a N-Channel MOSFET transistor in SOT-23-3 (TO-236) SMD (SMT) package. The features include 40V drain-source breakdown voltage, 5.6A (Tc) continuous drain current at 25°C ,2.5V @ 250μA gate-source threshold voltage. SI2318CDS-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 340pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 4.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028384-SI2318CDS-T1-GE3
Family Name Si3210
Introduction Date July 28, 1998
ECCN EAR99
Country of Origin Taiwan
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 65 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Motor Drive & Control
Alternative Parts
(Cross-Reference)
KMB3D9N40TA;  TSM2318CX RF; TSM2318CX; 
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SI2318CDS-T1-GE3 Price

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SI2318CDS-T1-GE3 Transistors - FETs, MOSFETs - RF

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