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SI4435DYTRPBF

Part No : SI4435DYTRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 30V 8A 8-SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
75+
€0.601
€45.086
195+
€0.490
€95.589
605+
€0.427
€258.589
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,500 pieces can ship immediately
MOQ: 75 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2320pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028490-SI4435DYTRPBF
Family Name Si4435DY
Introduction Date October 14, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 72 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
Si4435DY-T1-REVA;  Si4435DY-REVA-E3;  SI4435DY-REVA-T1; 
SI4435DYTRPBF, produced by Infineon Technologies, is a P-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 8A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI4435DYTRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2320pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028490-SI4435DYTRPBF
Family Name Si4435DY
Introduction Date October 14, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 72 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
Si4435DY-T1-REVA;  Si4435DY-REVA-E3;  SI4435DY-REVA-T1; 
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