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SI4435DYTRPBF

MOSFET P-CH 30V 8A 8-SOIC
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
175+
€0.246
€43.043
445+
€0.194
€86.490
1,480+
€0.175
€258.378
Availability: 1,400 In Stock
This product has a minimum quantity of 175
SI4435DYTRPBF, produced by Infineon Technologies, is a P-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 8A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI4435DYTRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2320pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028490-SI4435DYTRPBF
Family Name Si4435DY
Introduction Date October 14, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
Si4435DY-T1-REVA;  Si4435DY-REVA-E3;  SI4435DY-REVA-T1; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
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  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2320pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028490-SI4435DYTRPBF
Family Name Si4435DY
Introduction Date October 14, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
Si4435DY-T1-REVA;  Si4435DY-REVA-E3;  SI4435DY-REVA-T1; 
SI4435DYTRPBF Price

SI4435DYTRPBF Datasheet
SI4435DYTRPBF Application

SI4435DYTRPBF Replacement
SI4435DYTRPBF Pdf

SI4435DYTRPBF Pinout
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SI4435DYTRPBF Picture
SI4435DYTRPBF In Stock

SI4435DYTRPBF Distributor
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