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SI4835DDY-T1-GE3

Part No :
SI4835DDY-T1-GE3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET P-CH 30V 13A 8-SOIC
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
140+
€0.350
€48.940
330+
€0.296
€97.562
505+
€0.287
€144.922
695+
€0.277
€192.754
900+
€0.269
€241.809
1,200+
€0.242
€290.056
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 22,989 pieces can ship immediately
MOQ: 140 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1960pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 5.6W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028532-SI4835DDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
SI4835DDY-T1-GE3, produced by Vishay, is a P-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 13A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SI4835DDY-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1960pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 5.6W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028532-SI4835DDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
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SI4835DDY-T1-GE3 Transistors - FETs, MOSFETs - RF

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