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SI5855CDC-T1-E3

MOSFET P-CH 20V 3.7A 1206-8
Manufacturer: Vishay
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Rated 5/5 based on 1 customer reviews
SI5855CDC-T1-E3, produced by Vishay, is a P-Channel MOSFET transistor in 1206-8 ChipFET SMD (SMT) package. The features include 20V drain-source breakdown voltage, 3.7A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI5855CDC-T1-E3 is used in the -55°C to 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
320+
€0.135
€43.206
810+
€0.107
€86.378
2,680+
€0.096
€258.138
Availability: 18,000 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 320 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028582-SI5855CDC-T1-E3
Family Name Si5855CDC
Introduction Date September 28, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat 55 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
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  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 028582-SI5855CDC-T1-E3
Family Name Si5855CDC
Introduction Date September 28, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat 55 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
SI5855CDC-T1-E3 Price

SI5855CDC-T1-E3 Datasheet
SI5855CDC-T1-E3 Application

SI5855CDC-T1-E3 Replacement
SI5855CDC-T1-E3 Pdf

SI5855CDC-T1-E3 Pinout
SI5855CDC-T1-E3 Image

SI5855CDC-T1-E3 Picture
SI5855CDC-T1-E3 In Stock

SI5855CDC-T1-E3 Distributor
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