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SI5855CDC-T1-E3

Part No : SI5855CDC-T1-E3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 20V 3.7A 1206-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
310+
€0.140
€43.456
725+
€0.119
€86.043
1,120+
€0.115
€129.069
1,555+
€0.111
€172.512
2,000+
€0.108
€215.000
2,655+
€0.097
€258.013
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 18,000 pieces can ship immediately
MOQ: 310 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
Introduction Date September 28, 2008
Family Name Si5855CDC
Win Source Part Number 028582-SI5855CDC-T1-E3
Dimension 8-SMD, Flat Lead
Case / Package 1206-8 ChipFET
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
FET Feature Schottky Diode (Isolated)
Maximum Gate-Source Voltage ±8V
Max Input Capacitance 276pF @ 10V
Max Gate Charge 6.8nC @ 5V
Gate-Source Threshold Voltage 1V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Continuous Drain Current at 25°C 3.7A (Tc)
Drain-Source Breakdown Voltage 20V
Technology MOSFET
Polarity P-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
SI5855CDC-T1-E3, produced by Vishay, is a P-Channel MOSFET transistor in 1206-8 ChipFET SMD (SMT) package. The features include 20V drain-source breakdown voltage, 3.7A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI5855CDC-T1-E3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
Introduction Date September 28, 2008
Family Name Si5855CDC
Win Source Part Number 028582-SI5855CDC-T1-E3
Dimension 8-SMD, Flat Lead
Case / Package 1206-8 ChipFET
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
FET Feature Schottky Diode (Isolated)
Maximum Gate-Source Voltage ±8V
Max Input Capacitance 276pF @ 10V
Max Gate Charge 6.8nC @ 5V
Gate-Source Threshold Voltage 1V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Continuous Drain Current at 25°C 3.7A (Tc)
Drain-Source Breakdown Voltage 20V
Technology MOSFET
Polarity P-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
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