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SI5855CDC-T1-E3

Part No :
SI5855CDC-T1-E3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET P-CH 20V 3.7A 1206-8
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
310+
€0.157
€48.660
725+
€0.133
€96.348
1,120+
€0.129
€144.527
1,555+
€0.124
€193.173
2,000+
€0.120
€240.750
2,655+
€0.109
€288.914
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 26,930 pieces can ship immediately
MOQ: 310 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028582-SI5855CDC-T1-E3
Family Name Si5855CDC
Introduction Date September 28, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
SI5855CDC-T1-E3, produced by Vishay, is a P-Channel MOSFET transistor in 1206-8 ChipFET SMD (SMT) package. The features include 20V drain-source breakdown voltage, 3.7A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI5855CDC-T1-E3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028582-SI5855CDC-T1-E3
Family Name Si5855CDC
Introduction Date September 28, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
NTHD4P02FT1G;  NTHD4P02FT1;  
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SI5855CDC-T1-E3 Price

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