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SI7113DN-T1-GE3

Part No : SI7113DN-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 100V 13.2A 1212-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
110+
$0.455
$50.050
260+
$0.385
$100.100
405+
$0.374
$151.470
555+
$0.362
$200.910
715+
$0.350
$250.250
955+
$0.315
$300.825
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 29,769 pieces can ship immediately
MOQ: 110 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1480pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 134 mOhm @ 4A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028599-SI7113DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
SI7113DN-T1-GE3, produced by Vishay, is a P-Channel MOSFET transistor in PowerPAK 1212-8 SMD (SMT) package. The features include 100V drain-source breakdown voltage, 13.2A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SI7113DN-T1-GE3 is used in the -50°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1480pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 134 mOhm @ 4A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028599-SI7113DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
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