Search
Filters

SPA07N60C3

MOSFET N-CH 650V 7.3A TO-220
Manufacturer: Infineon Technologies
rohs
Rated 5/5 based on 1 customer reviews
SPA07N60C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO220-FP Through Hole package. The features include 650V drain-source breakdown voltage, 7.3A (Tc) continuous drain current at 25°C ,3.9V @ 250μA gate-source threshold voltage. SPA07N60C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
110+
€0.409
€44.935
285+
€0.334
€95.099
890+
€0.291
€258.705
Availability: 500 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 110 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091570-SPA07N60C3
Family Name SPA07N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 49 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
SiHF7N60E-E3;   SiHF7N60E-GE3; TSM60N600CI C0G; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091570-SPA07N60C3
Family Name SPA07N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 49 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
SiHF7N60E-E3;   SiHF7N60E-GE3; TSM60N600CI C0G; 
SPA07N60C3 Price

SPA07N60C3 Datasheet
SPA07N60C3 Application

SPA07N60C3 Replacement
SPA07N60C3 Pdf

SPA07N60C3 Pinout
SPA07N60C3 Image

SPA07N60C3 Picture
SPA07N60C3 In Stock

SPA07N60C3 Distributor
SPA07N60C3 Transistors - FETs, MOSFETs - RF

Image
Mfr.Part No
Description
Stock
FIXED IND 10UH 3.1A 44.2 MOHM
860
Silicon PNP Epitaxial
208
CAP CER 1000PF 1KV X7S 1206
92500
IC CLK GENERATOR PLL 8-SOIC
3968
IC ADC 12BIT 80MSPS SAMPLE 48QFN
268