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SPA07N60C3

Part No : SPA07N60C3
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 650V 7.3A TO-220
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
105+
€0.441
€46.305
245+
€0.374
€91.508
375+
€0.362
€135.675
515+
€0.351
€180.765
665+
€0.339
€225.635
885+
€0.305
€270.014
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 559 pieces can ship immediately
MOQ: 105 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 091570-SPA07N60C3
Family Name SPA07N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
SiHF7N60E-E3;   SiHF7N60E-GE3; TSM60N600CI C0G; 

SPA07N60C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO220-FP Through Hole package. The features include 650V drain-source breakdown voltage, 7.3A (Tc) continuous drain current at 25°C ,3.9V @ 250μA gate-source threshold voltage. SPA07N60C3 is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 091570-SPA07N60C3
Family Name SPA07N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
SiHF7N60E-E3;   SiHF7N60E-GE3; TSM60N600CI C0G; 
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SPA07N60C3 Transistors - FETs, MOSFETs - RF

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