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SPA11N60C3XKSA1

MOSFET N-CH 600V 11A TO220-3
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews
Availability: 500 In Stock
SPA11N60C3XKSA1, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO220-3-31 Full Pack Through Hole package. The features include 600V drain-source breakdown voltage, 11A (Tc) continuous drain current at 25°C ,3.9V @ 500μA gate-source threshold voltage. SPA11N60C3XKSA1 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-31 Full Pack
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 099490-SPA11N60C3XKSA1
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-31 Full Pack
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 099490-SPA11N60C3XKSA1
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