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SPB17N80C3

MOSFET N-CH 800V 17A D2PAK
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews
SPB17N80C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO263-3-2 SMD (SMT) package. The features include 800V drain-source breakdown voltage, 17A (Tc) continuous drain current at 25°C ,3.9V @ 1mA gate-source threshold voltage. SPB17N80C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
20+
$3.214
$64.280
45+
$2.622
$117.990
135+
$2.284
$308.340
Availability: 103,885 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 20 pcs
Products specifications
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
FCB290N80; STB11NM80;  STB18NM80;  
ECCN EAR99
Introduction Date July 25, 2002
Family Name SPB17N80C3
Win Source Part Number 005266-SPB17N80C3
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package PG-TO263-3-2
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Power Dissipation (Max) 227W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 2300pF @ 100V
Max Gate Charge 177nC @ 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 17A (Tc)
Drain-Source Breakdown Voltage 800V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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  • The Pre-Shipment Inspection (PSI) will be applied;
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  • For more details, please kindly review our FAQ page.
Products specifications
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Sufficient
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
FCB290N80; STB11NM80;  STB18NM80;  
ECCN EAR99
Introduction Date July 25, 2002
Family Name SPB17N80C3
Win Source Part Number 005266-SPB17N80C3
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package PG-TO263-3-2
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Power Dissipation (Max) 227W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 2300pF @ 100V
Max Gate Charge 177nC @ 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 17A (Tc)
Drain-Source Breakdown Voltage 800V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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