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SPB17N80C3

MOSFET N-CH 800V 17A D2PAK
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
10+
€5.135
€51.354
25+
€4.055
€101.363
75+
€3.650
€273.713
Availability: 103,885 In Stock
This product has a minimum quantity of 10
SPB17N80C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO263-3-2 SMD (SMT) package. The features include 800V drain-source breakdown voltage, 17A (Tc) continuous drain current at 25°C ,3.9V @ 1mA gate-source threshold voltage. SPB17N80C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 2300pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 005266-SPB17N80C3
Family Name SPB17N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FCB290N80; STB11NM80;  STB18NM80;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 2300pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 005266-SPB17N80C3
Family Name SPB17N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FCB290N80; STB11NM80;  STB18NM80;  
SPB17N80C3 Price

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