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SPN02N60C3

Part No : SPN02N60C3
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 650V 0.4A SOT-223
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
145+
€0.313
€45.414
340+
€0.266
€90.270
525+
€0.257
€135.135
725+
€0.249
€180.743
935+
€0.241
€225.522
1,245+
€0.217
€270.041
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 36,550 pieces can ship immediately
MOQ: 145 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 102624-SPN02N60C3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 42 pct.
Supply and Demand Status Sufficient
SPN02N60C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-SOT223-4 SMD (SMT) package. The features include 650V drain-source breakdown voltage, 400mA (Ta) continuous drain current at 25°C ,3.9V @ 80μA gate-source threshold voltage. SPN02N60C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 102624-SPN02N60C3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 42 pct.
Supply and Demand Status Sufficient
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SPN02N60C3 Transistors - FETs, MOSFETs - RF

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