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SPW20N60S5

MOSFET N-CH 600V 20A TO-247
Manufacturer: Infineon Technologies
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Availability: 1 In Stock
SPW20N60S5, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 20A (Tc) continuous drain current at 25°C ,5.5V @ 1mA gate-source threshold voltage. SPW20N60S5 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-247-3
Case / Package PG-TO247-3
Mounting Through Hole
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 190 mOhm @ 13A, 10V
Power Dissipation (Max) 208W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 3000pF @ 25V
Max Gate Charge 103nC @ 10V
Gate-Source Threshold Voltage 5.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 20A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
Win Source Part Number 212045-SPW20N60S5
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Products specifications
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-247-3
Case / Package PG-TO247-3
Mounting Through Hole
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 190 mOhm @ 13A, 10V
Power Dissipation (Max) 208W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 3000pF @ 25V
Max Gate Charge 103nC @ 10V
Gate-Source Threshold Voltage 5.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 20A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
Win Source Part Number 212045-SPW20N60S5
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