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SPW47N60C3

Part No : SPW47N60C3
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 650V 47A TO-247
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
11+
$4.746
$52.206
25+
$4.016
$100.400
40+
$3.895
$155.800
55+
$3.773
$207.515
70+
$3.651
$255.570
95+
$3.286
$312.170
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 36,519 pieces can ship immediately
MOQ: 11 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2.7mA
Max Gate Charge 320nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 415W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086810-SPW47N60C3
Family Name SPW47N60C3
Introduction Date July 25, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 47 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
APT47N65BC3G;   SiHW47N65E-GE3; SiHG47N60S-E3;  
SPW47N60C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 650V drain-source breakdown voltage, 47A (Tc) continuous drain current at 25°C ,3.9V @ 2.7mA gate-source threshold voltage. SPW47N60C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2.7mA
Max Gate Charge 320nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 415W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086810-SPW47N60C3
Family Name SPW47N60C3
Introduction Date July 25, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 47 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
APT47N65BC3G;   SiHW47N65E-GE3; SiHG47N60S-E3;  
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