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STB23NM60ND

MOSFET N-CH 600V 19.5A D2PAK
Manufacturer: STMicroelectronics
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Rated 5/5 based on 1 customer reviews
STB23NM60ND, produced by STMicroelectronics, is a N-Channel MOSFET transistor in D2PAK SMD (SMT) package. The features include 600V drain-source breakdown voltage, 19.5A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. STB23NM60ND is used in the 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
40+
$1.398
$55.920
100+
$1.140
$114.000
305+
$0.993
$302.865
Availability: 1 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 40 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2050pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 031072-STB23NM60ND
Family Name STB23NM60ND
Introduction Date January 22, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 48 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
R6524KNJTL; AOB15S65;   IPB65R225C7A; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2050pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 031072-STB23NM60ND
Family Name STB23NM60ND
Introduction Date January 22, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 48 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
R6524KNJTL; AOB15S65;   IPB65R225C7A; 
STB23NM60ND Price

STB23NM60ND Datasheet
STB23NM60ND Application

STB23NM60ND Replacement
STB23NM60ND Pdf

STB23NM60ND Pinout
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STB23NM60ND Picture
STB23NM60ND In Stock

STB23NM60ND Distributor
STB23NM60ND Transistors - FETs, MOSFETs - RF

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