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STF13NM60N

Part No : STF13NM60N
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 600V 11A TO-220FP
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
70+
€0.649
€45.451
180+
€0.530
€95.357
560+
€0.462
€258.619
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 22,018 pieces can ship immediately
MOQ: 70 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 790pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 031174-STF13NM60N
Family Name STF13NM60N
Introduction Date February 23, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
ZDX100N60;  SPA16N50C3XK; SPA16N50C3X; 
STF13NM60N, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-220FP Through Hole package. The features include 600V drain-source breakdown voltage, 11A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. STF13NM60N is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 790pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 031174-STF13NM60N
Family Name STF13NM60N
Introduction Date February 23, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
ZDX100N60;  SPA16N50C3XK; SPA16N50C3X; 
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STF13NM60N Transistors - FETs, MOSFETs - RF