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STL7N60M2

MOSFET N-CH 600V 5A POWERFLAT
Manufacturer: STMicroelectronics
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Rated 5/5 based on 1 customer reviews
STL7N60M2, produced by STMicroelectronics, is a N-Channel MOSFET transistor in PowerFLAT (5x5) SMD (SMT) package. The features include 600V drain-source breakdown voltage, 5A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. STL7N60M2 is used in the 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
60+
$0.839
$50.340
165+
$0.684
$112.860
505+
$0.596
$300.980
Availability: 1 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 60 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.8nC @ 10V
Max Input Capacitance 271pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 4W (Ta), 67W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFLAT (5x5)
Dimension 8-PowerVDFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 143803-STL7N60M2
Family Name STL7N60M2
Introduction Date August 03, 2015
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 31 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.8nC @ 10V
Max Input Capacitance 271pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 4W (Ta), 67W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFLAT (5x5)
Dimension 8-PowerVDFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 143803-STL7N60M2
Family Name STL7N60M2
Introduction Date August 03, 2015
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 31 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
STL7N60M2 Price

STL7N60M2 Datasheet
STL7N60M2 Application

STL7N60M2 Replacement
STL7N60M2 Pdf

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STL7N60M2 Picture
STL7N60M2 In Stock

STL7N60M2 Distributor
STL7N60M2 Transistors - FETs, MOSFETs - RF

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