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STQ1NK60ZR-AP

Part No :
STQ1NK60ZR-AP
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 600V 0.3A TO-92 / Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 T/R
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
680+
$0.074
$50.320
1,590+
$0.063
$100.170
2,460+
$0.061
$150.060
3,390+
$0.059
$200.010
4,390+
$0.057
$250.230
5,885+
$0.051
$300.135
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 62,554 pieces can ship immediately
MOQ: 680 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 6.9nC @ 10V
Max Input Capacitance 94pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3W (Tc)
Maximum Rds On at Id,Vgs 15 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 212392-STQ1NK60ZR-AP
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
Family Name STQ1NK60ZR
Introduction Date March 19, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Alternative Parts
(Cross-Reference)
TSM1N60SCT A3; PJN1NA60_B0_00001; TSM1NB60SCT A3; AP01L60AT; 
STQ1NK60ZR-AP, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-92-3 Through Hole package. The features include 600V drain-source breakdown voltage, 300mA (Tc) continuous drain current at 25°C ,4.5V @ 50μA gate-source threshold voltage. STQ1NK60ZR-AP is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 6.9nC @ 10V
Max Input Capacitance 94pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3W (Tc)
Maximum Rds On at Id,Vgs 15 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 212392-STQ1NK60ZR-AP
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
Family Name STQ1NK60ZR
Introduction Date March 19, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Alternative Parts
(Cross-Reference)
TSM1N60SCT A3; PJN1NA60_B0_00001; TSM1NB60SCT A3; AP01L60AT; 
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