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STU4N62K3

Part No :
STU4N62K3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 620V 3.8A IPAK
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
105+
$0.4940
$51.870
245+
$0.4150
$101.675
375+
$0.4020
$150.750
515+
$0.3900
$200.850
665+
$0.3780
$251.370
880+
$0.3410
$300.080
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (Stock & Lead time): 12,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Sufficient
Fake Threat In the Open Market 46 pct.
Popularity High
Is this a common-used part? Yes
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Case / Package I-Pak
Mounting Through Hole
Temperature Range - Operating 150°C (TJ)
Power Dissipation (Max) 70W (Tc)
Maximum Gate-Source Voltage ±30V
Max Gate Charge 22nC @ 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 3.8A (Tc)
Drain-Source Breakdown Voltage 620V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
Max Input Capacitance 550pF @ 50V
Maximum Rds On at Id,Vgs 2 Ohm @ 1.9A, 10V
Win Source Part Number 093309-STU4N62K3
STU4N62K3, produced by STMicroelectronics, is a N-Channel MOSFET transistor in I-Pak Through Hole package. The features include 620V drain-source breakdown voltage, 3.8A (Tc) continuous drain current at 25°C ,4.5V @ 50μA gate-source threshold voltage. STU4N62K3 is used in the 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Sufficient
Fake Threat In the Open Market 46 pct.
Popularity High
Is this a common-used part? Yes
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Case / Package I-Pak
Mounting Through Hole
Temperature Range - Operating 150°C (TJ)
Power Dissipation (Max) 70W (Tc)
Maximum Gate-Source Voltage ±30V
Max Gate Charge 22nC @ 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 3.8A (Tc)
Drain-Source Breakdown Voltage 620V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
Max Input Capacitance 550pF @ 50V
Maximum Rds On at Id,Vgs 2 Ohm @ 1.9A, 10V
Win Source Part Number 093309-STU4N62K3
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