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STW10NK80Z

Part No : STW10NK80Z
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 800V 9A TO-247
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
30+
€1.513
€45.387
75+
€1.280
€95.985
110+
€1.241
€136.521
150+
€1.202
€180.360
195+
€1.164
€226.922
260+
€1.048
€272.376
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 6,409 pieces can ship immediately
MOQ: 30 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 090306-STW10NK80Z
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
IXFH13N80Q;  STW12NK80Z;  STW9N80K5; 
STW10NK80Z, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 800V drain-source breakdown voltage, 9A (Tc) continuous drain current at 25°C ,4.5V @ 100μA gate-source threshold voltage. STW10NK80Z is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 090306-STW10NK80Z
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
IXFH13N80Q;  STW12NK80Z;  STW9N80K5; 
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