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STW20NM60FD

Part No :
STW20NM60FD
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 600V 20A TO-247
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
11+
$4.969
$54.659
25+
$4.205
$105.125
40+
$4.078
$163.120
55+
$3.950
$217.250
70+
$3.823
$267.610
90+
$3.441
$309.690
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 900 pieces can ship immediately
MOQ: 11 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Limited
Fake Threat In the Open Market 36 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 037563-STW20NM60FD
Dimension TO-247-3
Case / Package TO-247-3
Mounting Through Hole
Temperature Range - Operating -65°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 290 mOhm @ 10A, 10V
Power Dissipation (Max) 214W (Tc)
Maximum Gate-Source Voltage ±30V
Max Input Capacitance 1300pF @ 25V
Max Gate Charge 37nC @ 10V
Gate-Source Threshold Voltage 5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 20A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
STW20NM60FD, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 20A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. STW20NM60FD is used in the -65°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Limited
Fake Threat In the Open Market 36 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 037563-STW20NM60FD
Dimension TO-247-3
Case / Package TO-247-3
Mounting Through Hole
Temperature Range - Operating -65°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 290 mOhm @ 10A, 10V
Power Dissipation (Max) 214W (Tc)
Maximum Gate-Source Voltage ±30V
Max Input Capacitance 1300pF @ 25V
Max Gate Charge 37nC @ 10V
Gate-Source Threshold Voltage 5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 20A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
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