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STW28NM50N

Part No : STW28NM50N
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 500V 21A TO-247
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
40+
€1.200
€47.988
90+
€1.015
€91.368
140+
€0.985
€137.844
190+
€0.954
€181.260
245+
€0.923
€226.233
330+
€0.831
€274.131
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 410 pieces can ship immediately
MOQ: 40 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1735pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 158 mOhm @ 10.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 037519-STW28NM50N
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Limited
Application Field Used in Industrial
Alternative Parts
(Cross-Reference)
IXFK50N50;  STW32NM50N;  STW23NM50N;  STW28NM50N;  
STW28NM50N, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 500V drain-source breakdown voltage, 21A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. STW28NM50N is used in the 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1735pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 158 mOhm @ 10.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 037519-STW28NM50N
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Limited
Application Field Used in Industrial
Alternative Parts
(Cross-Reference)
IXFK50N50;  STW32NM50N;  STW23NM50N;  STW28NM50N;  
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STW28NM50N Transistors - FETs, MOSFETs - RF

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