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STW34NM60N

Part No :
STW34NM60N
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 600V 29A TO-247
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
11+
€4.381
€48.186
25+
€3.707
€92.671
40+
€3.594
€143.753
55+
€3.482
€191.492
70+
€3.370
€235.868
90+
€3.032
€272.901
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 14,385 pieces can ship immediately
MOQ: 11 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Balance
Fake Threat In the Open Market 58 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 087667-STW34NM60N
Dimension TO-247-3
Case / Package TO-247-3
Mounting Through Hole
Temperature Range - Operating 150°C (TJ)
Maximum Rds On at Id,Vgs 105 mOhm @ 14.5A, 10V
Power Dissipation (Max) 250W (Tc)
Maximum Gate-Source Voltage ±25V
Max Input Capacitance 2722pF @ 100V
Max Gate Charge 80nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 29A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
STW34NM60N, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 29A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. STW34NM60N is used in the 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Balance
Fake Threat In the Open Market 58 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 087667-STW34NM60N
Dimension TO-247-3
Case / Package TO-247-3
Mounting Through Hole
Temperature Range - Operating 150°C (TJ)
Maximum Rds On at Id,Vgs 105 mOhm @ 14.5A, 10V
Power Dissipation (Max) 250W (Tc)
Maximum Gate-Source Voltage ±25V
Max Input Capacitance 2722pF @ 100V
Max Gate Charge 80nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 29A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products
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STW34NM60N Distributor
STW34NM60N Transistors - FETs, MOSFETs - RF

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