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STW35N65M5

Part No : STW35N65M5
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 650V 27A TO-247
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
10+
€4.802
€48.015
25+
€4.063
€101.565
35+
€3.939
€137.876
50+
€3.816
€190.800
65+
€3.694
€240.084
85+
€3.324
€282.515
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 1,047 pieces can ship immediately
MOQ: 10 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 3750pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 98 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 212435-STW35N65M5
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 35 pct.
Supply and Demand Status Balance
STW35N65M5, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 650V drain-source breakdown voltage, 27A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. STW35N65M5 is used in the 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 3750pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 98 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 212435-STW35N65M5
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 35 pct.
Supply and Demand Status Balance
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STW35N65M5 Transistors - FETs, MOSFETs - RF

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