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STW5NK100Z

Part No : STW5NK100Z
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 1000V 3.5A TO-247
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
30+
€1.708
€51.246
65+
€1.445
€93.951
100+
€1.402
€140.220
135+
€1.358
€183.344
175+
€1.314
€229.950
230+
€1.183
€271.998
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 188 pieces can ship immediately
MOQ: 30 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1154pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3.7 Ohm @ 1.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 038003-STW5NK100Z
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Limited
STW5NK100Z, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-247-3 Through Hole package. The features include 1000V (1kV) drain-source breakdown voltage, 3.5A (Tc) continuous drain current at 25°C ,4.5V @ 100μA gate-source threshold voltage. STW5NK100Z is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1154pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3.7 Ohm @ 1.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 038003-STW5NK100Z
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Limited
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STW5NK100Z Transistors - FETs, MOSFETs - RF

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