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SUD19P06-60-GE3

Part No : SUD19P06-60-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 60V 18.3A TO-252
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
45+
€1.011
€45.482
110+
€0.855
€94.050
165+
€0.829
€136.769
225+
€0.804
€180.833
290+
€0.778
€225.504
390+
€0.699
€272.727
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 84 pieces can ship immediately
MOQ: 45 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 056996-SUD19P06-60-GE3
Popularity Medium
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Limited
Application Field Used in Power Management
SUD19P06-60-GE3, produced by Vishay, is a P-Channel MOSFET transistor in TO-252, (D-Pak) SMD (SMT) package. The features include 60V drain-source breakdown voltage, 18.3A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SUD19P06-60-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 056996-SUD19P06-60-GE3
Popularity Medium
Fake Threat In the Open Market 48 pct.
Supply and Demand Status Limited
Application Field Used in Power Management
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