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SUD20N10-66L-GE3

Part No :
SUD20N10-66L-GE3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 100V 16.9A TO-252
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
325+
€0.1380
€44.834
785+
€0.1140
€89.427
1,210+
€0.1100
€133.536
1,670+
€0.1070
€178.356
2,140+
€0.1040
€222.838
2,860+
€0.0930
€267.267
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,400 pieces can ship immediately
MOQ: 355 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 860pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212446-SUD20N10-66L-GE3
Popularity Medium
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Limited
SUD20N10-66L-GE3, produced by Vishay, is a N-Channel MOSFET transistor in TO-252 SMD (SMT) package. The features include 100V drain-source breakdown voltage, 16.9A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SUD20N10-66L-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 860pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212446-SUD20N10-66L-GE3
Popularity Medium
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Limited
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