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SUD50N03-11-E3

Part No : SUD50N03-11-E3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 30V 50A TO252
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
60+
$0.877
$52.620
135+
$0.742
$100.170
210+
$0.720
$151.200
290+
$0.697
$202.130
375+
$0.675
$253.125
495+
$0.607
$300.465
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,076 pieces can ship immediately
MOQ: 60 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 7.5W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 057003-SUD50N03-11-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 46 pct.
Supply and Demand Status Balance
SUD50N03-11-E3, produced by Vishay, is a N-Channel MOSFET transistor in TO-252, (D-Pak) SMD (SMT) package. The features include 30V drain-source breakdown voltage, 50A (Tc) continuous drain current at 25°C ,800mV @ 250μA (Min) gate-source threshold voltage. SUD50N03-11-E3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 7.5W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 057003-SUD50N03-11-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 46 pct.
Supply and Demand Status Balance
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SUD50N03-11-E3 Transistors - FETs, MOSFETs - RF

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