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SUD50N04-8M8P-4GE3

Part No :
SUD50N04-8M8P-4GE3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 40V 14A TO-252
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
395+
€0.114
€44.998
930+
€0.096
€89.392
1,430+
€0.093
€133.634
1,965+
€0.091
€178.383
2,555+
€0.087
€222.847
3,375+
€0.079
€267.334
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,400 pieces can ship immediately
MOQ: 395 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Limited
Fake Threat In the Open Market 55 pct.
Popularity Medium
Win Source Part Number 031614-SUD50N04-8M8P-4GE3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package TO-252, (D-Pak)
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 20A, 10V
Power Dissipation (Max) 3.1W (Ta), 48.1W (Tc)
Maximum Gate-Source Voltage ±20V
Max Gate Charge 56nC @ 10V
Gate-Source Threshold Voltage 3V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain-Source Breakdown Voltage 40V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
Continuous Drain Current at 25°C 14A (Ta), 50A (Tc)
Max Input Capacitance 2400pF @ 20V
SUD50N04-8M8P-4GE3, produced by Vishay, is a N-Channel MOSFET transistor in TO-252, (D-Pak) SMD (SMT) package. The features include 40V drain-source breakdown voltage, 14A (Ta), 50A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SUD50N04-8M8P-4GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Limited
Fake Threat In the Open Market 55 pct.
Popularity Medium
Win Source Part Number 031614-SUD50N04-8M8P-4GE3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package TO-252, (D-Pak)
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 20A, 10V
Power Dissipation (Max) 3.1W (Ta), 48.1W (Tc)
Maximum Gate-Source Voltage ±20V
Max Gate Charge 56nC @ 10V
Gate-Source Threshold Voltage 3V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain-Source Breakdown Voltage 40V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
Continuous Drain Current at 25°C 14A (Ta), 50A (Tc)
Max Input Capacitance 2400pF @ 20V
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SUD50N04-8M8P-4GE3 Transistors - FETs, MOSFETs - RF

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