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SUM60N10-17-E3

Part No : SUM60N10-17-E3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 100V 60A D2PAK
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
35+
€1.365
€47.786
80+
€1.156
€92.448
125+
€1.121
€140.063
170+
€1.085
€184.518
215+
€1.050
€225.815
290+
€0.946
€274.311
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 1,100 pieces can ship immediately
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031622-SUM60N10-17-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
SUM60N10-17-E3, produced by Vishay, is a N-Channel MOSFET transistor in TO-263 (D2Pak) SMD (SMT) package. The features include 100V drain-source breakdown voltage, 60A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. SUM60N10-17-E3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031622-SUM60N10-17-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 55 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
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SUM60N10-17-E3 Transistors - FETs, MOSFETs - RF

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