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SUP85N10-10-E3

Part No : SUP85N10-10-E3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 100V 85A TO220AB
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 460 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 6550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 133857-SUP85N10-10-E3
Popularity Medium
Fake Threat In the Open Market 32 pct.
Supply and Demand Status Limited
Quantity per package 500
SUP85N10-10-E3, produced by Vishay, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 100V drain-source breakdown voltage, 85A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SUP85N10-10-E3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 6550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 133857-SUP85N10-10-E3
Popularity Medium
Fake Threat In the Open Market 32 pct.
Supply and Demand Status Limited
Quantity per package 500
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SUP85N10-10-E3 Transistors - FETs, MOSFETs - RF

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