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MB85R4M2TFN-G-ASE1

Part No : MB85R4M2TFN-G-ASE1
Catalog : Memory
Description : IC FRAM 4MBIT 150NS 44TSOP
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 2,500 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Integrated Circuits
Manufacturer Fujitsu Electronics America, Inc.
Packaging Tray
Status Active
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 4Mb (256K x 16)
Access Time 150ns
Supply Voltage - Operating 1.8 V to 3.6 V
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package 44-TSOP
Win Source Part Number 1072157-MB85R4M2TFN-G-ASE1
Popularity Medium
Fake Threat In the Open Market 28 pct.
Supply and Demand Status Balance
The MB85R4M2TFN-G-ASE1 eliminates the need to store data through the battery, thereby reducing the board area of ??the PCB substrate memory and associated components used in more than 50% of the product.?When SRAM stores data in memory with the main power turned off, it consumes about 15μW / sec current to save the data.?Because FRAM is non-volatile memory, it does not consume any power when the power is off.?Removing the battery not only reduces part costs but also eliminates the recurring costs associated with all battery replacement or repair, significantly reducing the total cost of development and operation.
Products specifications
Categories Integrated Circuits
Manufacturer Fujitsu Electronics America, Inc.
Packaging Tray
Status Active
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 4Mb (256K x 16)
Access Time 150ns
Supply Voltage - Operating 1.8 V to 3.6 V
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package 44-TSOP
Win Source Part Number 1072157-MB85R4M2TFN-G-ASE1
Popularity Medium
Fake Threat In the Open Market 28 pct.
Supply and Demand Status Balance
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