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IRFD113

Part No : IRFD113
Manufacturer : Vishay
Catalog : FETs - Single
Description : POWER-MOSFET FIELD EFFECT POWER TRANSISTOR | MOSFET N-CH 60V 800MA 4-DIP
Rohs State : Need to verify
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 5,092 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 800mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 800mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187559-IRFD113
Manufacturer Homepage 0
Popularity Medium
Fake Threat In the Open Market 43 pct.
Supply and Demand Status Balance
Vishay IRFD113 is available at WIN SOURCE. Please review product page below for detailed information, including IRFD113 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD113 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 800mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 800mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187559-IRFD113
Manufacturer Homepage 0
Popularity Medium
Fake Threat In the Open Market 43 pct.
Supply and Demand Status Balance
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