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HP8K22

30V NCH+NCH MID POWER MOSFET
Manufacturer: Rohm Semiconductor
rohs
Availability: 145 In Stock
HP8K22, produced by Rohm Semiconductor, is a transistor in 8-HSOP SMD (SMT) package. The features include 30V drain-source breakdown voltage, 27A, 57A continuous drain current at 25°C ,2.5V @ 1mA gate-source threshold voltage. HP8K22 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A, 57A
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 16.8nC @ 10V
Max Input Capacitance 1080pF @ 15V
Maximum Power Dissipation 25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 275916-HP8K22
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A, 57A
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 16.8nC @ 10V
Max Input Capacitance 1080pF @ 15V
Maximum Power Dissipation 25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 275916-HP8K22
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