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HUF75617D3ST

MOSFET N-CH 100V 16A DPAK
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Availability: 5,264 In Stock
HUF75617D3ST, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-252AA SMD (SMT) package. The features include 100V drain-source breakdown voltage, 16A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUF75617D3ST is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 20V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 64W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 040528-HUF75617D3ST
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 20V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 64W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 040528-HUF75617D3ST
HUF75617D3ST Price

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HUF75617D3ST Transistors - FETs, MOSFETs - RF

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