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HUF75631P3

MOSFET N-CH 100V 33A TO-220AB
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Availability: 733 In Stock
HUF75631P3, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 100V drain-source breakdown voltage, 33A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUF75631P3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 79nC @ 20V
Max Input Capacitance 1220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 040530-HUF75631P3
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 79nC @ 20V
Max Input Capacitance 1220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 040530-HUF75631P3
HUF75631P3 Price

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HUF75631P3 Transistors - FETs, MOSFETs - RF

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