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IPW60R070C6

Part No :
IPW60R070C6
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 600V 53A TO247
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
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Quantity
Unit Price
Ext. Price
3+
$18.1860
$54.558
7+
$15.0810
$105.567
11+
$14.6380
$161.018
15+
$14.1940
$212.910
19+
$13.7500
$261.250
25+
$12.4200
$310.500
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 6,110 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.72mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 3800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 391W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 25.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 58721-IPW60R070C6
Family Name IPW60R070C6
Introduction Date January 12, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 59 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
R6547ENZ1C9; R6530ENZ1C9; R6535ENZ1C9; 

IPW60R070C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 53A (Tc) continuous drain current at 25°C ,3.5V @ 1.72mA gate-source threshold voltage. IPW60R070C6 is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.72mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 3800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 391W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 25.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 58721-IPW60R070C6
Family Name IPW60R070C6
Introduction Date January 12, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 59 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
R6547ENZ1C9; R6530ENZ1C9; R6535ENZ1C9; 
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IPW60R070C6 Price

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IPW60R070C6 In Stock

IPW60R070C6 Distributor
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